Towards single-electron metrology
نویسندگان
چکیده
Karsten Flensberg Danish Institute of Fundamental Metrology, Anker Engelunds Vej 1, DK-2800 Lyngby, Denmark and Arkadi A. Odintsov Nederlands Meetinstituut, P.O. Box 654, 2600 AR Delft, The Netherlands, and Department of Applied Physics, Delft University of Technology, 2628 CJ Delft, The Netherlands, and Feike Liefrink and Paul Teunissen NMi Van Swinden Laboratorium, P.O. Box 654, 2600 AR Delft, The Netherlands.
منابع مشابه
Progress Towards Traceable Nanoscale Optical Critical Dimension Metrology for Semiconductors
Non-imaging optical critical dimension (OCD) techniques have rapidly become a preferred method for measuring nanoscale features in semiconductors. OCD relies upon the measurement of an optical reflectance signature from a grating target as a function of angle, wavelength and/or polarization. By comparing the signature with theoretical simulations, parameters of the grating lines such as critica...
متن کاملTHESIS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY Epitaxial Graphene Technology for Quantum Metrology
Graphene grown on silicon carbide by high-temperature annealing (SiC/G) is a strong contender in the race towards large-scale graphene electronics applications. The unique electronic properties of this system lead to a remarkably robust and accurate Hall resistance quantisation of 0.1 parts per billion, making SiC/G devices highly desirable for the endeavour of quantum resistance metrology. How...
متن کاملThe Quantum Metrology Triangle Experiment: Quantization Tests of an Electron Pump
We present our experimental set-up and discuss the results obtained with the quantum metrological triangle (QMT) experiment. This experiment consists in realizing Ohm’s law with the three effects used and investigated in quantum electrical metrology: the Josephson effect (JE), the quantum Hall effect (QHE) and the single electron tunneling effect (SET). The aim is to check the consistency of th...
متن کاملModel-Based Library for Critical Dimension Metrology by CD-SEM
In integrated circuit industry, device metrology is crucial to the future development of semiconductor industry. Critical dimension scanning electron microscope (CD-SEM) is used as a tool for the linewidth measurement and critical dimension (CD) metrology. However, the signal intensity in a secondary electron image obtained by CD-SEM is influenced not only by geometry character of specimen but ...
متن کاملCritical Issues in Scanning Electron Microscope Metrology
National Institute of Standards and Technology, Gaithersburg, MD 20899-0001 During the manufacturing of presentday integrated circuits, certain measurements must be made of the submicrometer structures composing the device with a high degree of repeatability. Optical microscopy, scanning electron microscopy, and the various forms of scanning probe microscopies are major microscopical techniques...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1998